Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template

Electrically driven c-plane InGaN-based blue edge emitting laser diodes on a strain-relaxed template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer was 26.6%, and the root mean square (RMS) roughness of the surface morphology was 0.65 nm. The laser diodes (LDs) on the SRT laser at 459 nm had a threshold current density of 52 kA/cm(2) under the room temperature pulsed operation. The internal loss of the LDs on the SRT was 30-35 cm(-1). Regardless of the high threshold current density, this is the first demonstrated laser diode using the strain-relaxed method on c-plane GaN.