Temperature-Dependent Hall Effect Studies of AZO Thin Films
APPLIED PHYSICS OF CONDENSED MATTER (APCOM 2021)(2021)
Abstract
Understanding of how the defects interact with each other and affect the properties of ZnO:Al thin films is one of great importance for improving their performance as a transparent conductive oxide. In the present work we studied the effect of annealing on the carrier concentration and Hall mobility of under-stoichiometric ZnO:Al films. Samples have been deposited by magnetron if and dc co-sputtering from ceramic and metallic targets with the same Zn(98%)/Al(2%) concentration. Raman spectra taken prior and after temperature-dependent Hall measurements, fulfilled the understanding of the mosaic of defect changes.
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Key words
azo,thin films,hall,temperature-dependent
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