Proposal of Field-Emission Device Capped with an Insulator Film and Aspects of Expected Performance

Abstract We propose a field-emission device capped with an insulator film (FEDCIF) similar to the Spindt-type emitter and demonstrate its performance and possible merits by simulations. The most significant aspect of the FEDCIF structure is its use of high-k dielectric material to cover the emitter. The potential drop across the high-k dielectric reduces the effective barrier height across the vacuum. In addition, the electron affinity of the high-k dielectric is large so the threshold voltage for emission is lowered when applying d. c. voltage. Future merits of the FEDCIF are considered.