Design of 30-56.5 GHz Resistive Single-Ended Mixer in 0.15μm GaN/SiC Technology

A wideband resistive mixer from 30 GHz to 56.5 GHz implemented in WIN Semiconductor's newly released 0.15μm GaN/SiC HEMT process is presented in this paper. The mixer exhibits a conversion loss of 10 dB at the midband for an optimum input LO power of 12 dBm. The LO-IF and RF-IF isolations are higher than 49 dB and 34 dB respectively. Mixer's input 1dB compression point is 18 dBm. The chip size including the pads is 1 mm 2 , and the circuit's active area is only 0.29 mm 2 .