Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors

Reconfigurable field-effect transistors come with an additional gate contact, which leads to challenges for compact modeling. In this work, a closed-form and physics-based DC model is derived for those devices, which combines the injection current over the Schottky barriers with the resistance-effects of partially ungated device channel segments or long channel devices. The model verification is done by comparing the results to TCAD simulations and measurements.