Defect generation behavior in Czochralski-grown ScAlMgO4 crystal using synchrotron X-ray topography

Journal of Crystal Growth(2023)

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摘要
•X-ray topographic observation of SAM in-plane and cross-section wafers of same ingot.•Characterization of unique straight- and stream-type dislocations using extinction rules.•Observation of defect structure from early- to late-growth stages in SAM cross-section wafer.•Discussion of behavior of striations and dislocations.•Close-correlation between defect structures and thermal strain in CZ-growth.
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关键词
A1. Defects,A1. Substrates,A1. X-ray topography,A2. Czochralski method,A2. Single crystal growth,B1. Oxides
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