Optical and structural properties of GeSn/SiGeSn multiple quantum wells for infrared optoelectronics

Oluwatobi Olorunsola,Hryhorii Stanchu,Solomon Ojo,Emmanuel Wangila,Abdulla Said,Mohammad Zamani-Alavijeh,Gregory Salamo,Shui-Qing Yu

Journal of Crystal Growth（2022）

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摘要

•Strong diffusion is observed at SiGeSn/GeSn interfaces during the MQW growth.•Intermixing effects are more pronounced at larger depths below the surface.•Non-radiative recombination centers originate from alloy disordering.•Photoluminescence intensity is degraded despite the increase of QWs number.

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关键词

A1. Interfaces,A1. X-ray diffraction,A3. Quantum wells,B1. SiGeSn alloys,A1. Absorption,A1. Emission

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