Mid-infrared InAs/InAsSb Type-II superlattices grown on silicon by MOCVD

Richard Brown,Bogdan Petrin Ratiu,Hui Jia,Khalifa M. Azizur-Rahman,Manyu Dang,Mingchu Tang,Baolai Liang,Huiyun Liu,Qiang Li

Journal of Crystal Growth（2022）

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摘要

•MOCVD growth of InAs/InAsSb Type-II superlattice on Si substrates.•IMF was utilized between GaAs and GaSb to overcome the mismatch.•Photoluminescent characteristics comparable to equivalent MBE grown results.•The GaSb/GaAs/Si buffer layer structure was demonstrated for T2SL.

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关键词

A3. Metalorganic chemical vapor deposition,B1. Antimonides,B1. Type-II superlattice,B2. III/V on Silicon,A1. Interfacial Misfit Array,B3. Infrared devices

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