High dV/dt Controllability of 1.2kV TCIGBT through Dynamic Avalanche Elimination

High dV/dt controllability of IGBTs is important to achieve high power efficiency and switching speed. However, the Dynamic Avalanche (DA) phenomenon in MOS-gated bipolar devices is one major issue to affect dV/dt controllability, switching loss as well as gate stability. In this paper, the fundamental limit of the turn-off dV/dt controllability of trench IGBTs is analyzed through 3-D TCAD simulations. A DA free design enabled by Trench Clustered IGBT (TCIGBT) is investigated to show significant improvement in dV/dt controllability compared to that of conventional TIGBT at same turn-off energy loss (Eoff) condition. Furthermore, experimental results confirm that TCIGBT can remain DA free performance and high dV/dt controllability at high temperature.