Next Generation GaN-based Architectures: From 240W USB-C Adapters to 11kW EV On-Board Chargers with Ultra-high Power Density and Wide Output Voltage Range

The inherent advantages of GaN devices compared to their Silicon counterparts, i.e. absence of reverse recovery charge, lower output and gate charges, etc., enable the operation of power electronic systems based on GaN devices at considerably higher switching frequencies. This facilitates the design of systems with power densities far beyond the limits of state-of-the-art Si systems, which is demonstrated in this paper with two very different examples: a 240 W mobile charger with two USB-C output ports covering very wide output voltages of 5-48 V, and a three-phase 11 kW on-board charger with an output voltage range of 250-1000 V.