dV/dt Control Methods for UnitedSiC SiC FETs with Internal Cascode Structure

The dV/dt of UnitedSiC SiC FET with internal cascode structure can be effectively controlled from 45V/ns to 5V/ns using three different methods - external Cgd method, device RC-snubber method, and JFET direct-drive method. The three methods have been studied using SPICE simulations and verified with experimental measurements. The performance of all 3 methods have been compared. This study was performed on UnitedSiC 9mOmega 1200V FET in TO247-4L package, but these dV/dt control methods can also be applied to UnitedSiC FET based modules, because they can be implemented on the gate drive board that is outside of the module.