GaN HEMT with Enhanced Back-Barrier for Power Electronics Applications
2022 5th International Conference on Power Electronics and their Applications (ICPEA)(2022)
摘要
In this paper, an enhanced structures of GaN HEMT by means of Back Barriers (BBs) is investigated to improve the electro-thermal behavior of the device for power electronics application. Different materials for the BB including GaN:UID and AlGaN were investigated. TCAD physical model was used to simulate and investigate the thermal characteristics of the GaN-HEMT. The results show an optimal performance with AlGaN barrier with respect to GaN:UID.
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关键词
GaN,Back Barrier,Reliability,Self-Heating,HEMT
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