A High-voltage Silicon-On-Insulator Lateral IGBT with Segmented Trenches for Improved Short circuit Ruggedness
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2022)
Abstract
A novel LIGBT with segmented trenches (STs) is proposed for improved short circuit ruggedness in this paper. STs are inserted in the drift region of the novel structure. STs can be formed simultaneously with isolation trenches by one-step etching and subsequently polysilicon refilling. The polysilicon in STs is connected to the emitter by metal interconnection. The electric potential modulation and hole blocking effect concepts are proposed in this work. In the saturation area, the electronic potential at the end of N-type inversion channel can be lowered by grounded STs, resulting in weakened electron injection. In the liner area, the holes from collector are blocked by STs, and thus the conductivity modulation is enhanced. As a result, the novel structure obtains an ultra-low I
sat
without increasing V
on
and 406% increase in t
sc
.
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Key words
Silicon-on-insulator,SOI,lateral IGBT,LIGBT,SOI-LIGBT,segmented trench,potential modulation,low saturation current,Isat,short-circuit,ruggedness
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