A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously
2022 23rd International Symposium on Quality Electronic Design (ISQED)（2022）
关键词
GAA Si NS MOSFET,statistical device simulation,random dopant fluctuation,interface trap fluctuation,work function fluctuation
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