Hot-Carrier Effect on TID Irradiated Short-Channel UTTB FD-SOI n-MOSFETs

Jiangwei Cui,Qiwen Zheng,Bingxu Ning,Xuefeng Yu,Kai Zhao,Ying Wei,Wu Lu,Chengfa He,Diyuan Ren,Fang Yu,Liewei Xu,Qi Guo

2018 IEEE Radiation Effects Data Workshop (REDW)（2018）

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摘要

The influence of total ionizing dose (TID) irradiation on hot-carrier effect of short channel ultra-thin body and buried oxide Fully Depleted Silicon On Insulator (UTBB FD-SOI) n-MOSFETs is investigated. Experimental results show larger parameters degradation for irradiated devices, which is due to irradiation generated defects in buried oxide (BOX).

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关键词

hot-carrier effect,total ionizing dose irradiation,irradiated devices,irradiation generated defects,parameters degradation,buried oxide Fully Depleted Silicon On Insulator,TID irradiated short-channel UTTB FD-SOI n-MOSFET,short channel ultra-thin body

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