Summary and Analysis of Neutron Displacement Damage Results

Timothy R. Oldham,Chad M. Whitney,Benjamin J. Griffiths,Nick van Vonno

2018 IEEE Radiation Effects Data Workshop (REDW)（2018）

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摘要

A summary of displacement damage sensitivity for bipolar components is presented. For discrete bipolar transistors, sensitivity to DDD correlates with f _T . For more complex circuits, a summary of existing test data is presented.

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关键词

displacement damage sensitivity,bipolar components,discrete bipolar transistors,DDD correlates,neutron displacement damage analysis,complex circuits,test data

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