Validation of Field-Plate Structures in Transistors on Rad-hardened
2018 International Conference on Radiation Effects of Electronic Devices (ICREED)(2018)
摘要
Poly and metal field-plate structures were designed in lateral-PNP bipolar junction transistors which fabricated on standard linear bipolar technology for validating their TID hardened effectiveness.
60
Co γ irradiation experiment was executed on these samples and experimental results were compared. Results showed that metal field-plate was better than poly field-plate.
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关键词
Field-Plate,Lateral PNP,TID,Rad-hardened
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