Hall effect in Si/SiO2(Cu, Ni) low-dimensional inhomogeneous structures

The temperature and magnetic field dependences of the Hall effect are analyzed in the temperature range 20-300 K in magnetic fields up to 10 T in Si/SiO2 systems with magnetic (Ni) and nonmagnetic (Cu) metals in the pores of the silicon dioxide layer. It is shown that V-H(Tau) in the Si/SiO2(Cu, Ni) system has a complex character up to the inversion of the sign of VH, which is a consequence of the presence of various mechanisms of electrotransport. The substantiation of the difference between the dependences V-H(Tau) for various metals is given. It is shown that at low temperatures in systems with a ferromagnetic metal there is an anomalous contribution to the Hall electromotive force.