Interfacial-Layer Design for Hf1-xZrxO2-Based FTJ Devices: From Atom to Array
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)(2022)
摘要
For the first time, we demonstrate Ferroelectric Tunneling Junctions (FTJs) with both (a) 10-year retention time projected from measured data and (b) robust endurance (> 10 8 cycles) with the on-off ratio >10× by inserting a 1.8nm Al 2 O 3 interfacial layer (IL) into the FTJs. Compared with Metal-Ferroelectric-Metal (MFM) FTJs, higher orthorhombic phase (~6×) was verified by physical analyses and first-principles calculations in our proposed Metal-Ferroelectric-IL-Metal (MFIM) FTJs, resulting in the remanent polarization (2P r ) which improves the retention and the on-off ratio significantly.
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关键词
ftj devices,interfacial-layer
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