ON/OFF current of nano-node field-effect transistors on p-substrate or SOI substrate

Higher drive current (ON current or ION) is desired on high performance (HP) chips, especially in advanced computing electronic products. In the meanwhile, the OFF current (IOFF) representing the standby performance is very important for the portable electronic products. How to handle or balance these two effects in nano-node process manufacturing is necessary to be precisely managed. In the recent advanced processes, the high-k (HK) gate dielectric or the 3-D fin shape on p-type substrate (p-substrate) or silicon-on-insulator (SOI) substrate is a feasible method to fit these needs. In this work, these two ON/OFF factors will be compared in manufacturing process and electrical performance.