衬底温度对Ga液滴在Al0.4Ga0.6As表面形成纳米结构的影响

HUANG Yan-Bin,MA Ming-Ming,GUO Xiang,WANG Yi,Luo Zi-Jiang,TANG Jia-Wei,LI Zhi-Hong,ZHANG Zhen-Dong,DING Zhao

Journal of Atomic and Molecular Physics（2020）

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Abstract

本文研究了不同衬底温度对Ga液滴在Al0.4Ga0.6As表面形成纳米结构的影响,当300℃≤T≤380℃时,Ga液滴演化成纳米孔(Nanohole)和盘状结构(diffusion halo),纳米结构的尺寸随温度升高而增大.当T≥385℃时,盘状结构消失,形成一定平坦的Alx Ga1-x As薄膜,Ga液滴在界面处继续向下刻蚀直至耗尽,形成平均直径为75 nm,平均孔深为5.52 nm的纳米孔.本文还通过盘状结构测出平均扩散长度△R,并拟合出Ga原子在Al0.4Ga0.6As表面的激活能EA=0.78(±0.01)eV和扩散前因子D0=0.15(×4.1±1)10-2 cm2s-1.

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