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Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation

Christoph Janowitz,Ali Mahmoodinezhad,Małgorzata Kot,Carlos Morales,Franziska Naumann,Paul Plate,Marvin Hartwig Zoellner, Florian Bärwolf, David Stolarek,Christian Wenger,Karsten Henkel,Jan Ingo Flege

Dalton Transactions（2022）

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Abstract
The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.
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ald preparation,al<sub>2</sub>o<sub>3</sub>/zno,interface
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