Mathematical modelling of kink effect in deep-submicron FDSOIMOSFET
2018 Emerging Trends in Electronic Devices and Computational Techniques (EDCT)（2018）
摘要
The kink effect has been observed in deep-submicron Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs and the corresponding devices have also been studied through physical modelling and simulation. The current work is an endeavour to put forward a mathematical model for the kink effect as observed in deep-submicron MOSFETs which is found to agree with the modelling and simulation results obtained by other researchers in the field.
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关键词
kink effect,deep-submicron,FDSOI,mathematical modeling
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