INVESTIGATION OF THE ELECTRICAL CHARACTERISTICS OF MEMRISTOR STRUCTURES BASED ON SILICON NITRIDE, "Электронная техника. Серия 3. Микроэлектроника"

G.Ya. Krasnikov, E.S. Gornev, D.S. Mizginov

Электронная техника. Серия 3. Микроэлектроника（2022）

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摘要

In this article, a study was made of the charge storage time in a memristor based on SiN. The distribution profile of traps in the band gap of SiN, their energy and concentration are determined.

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memristor structures based,silicon nitride,electrical characteristics

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