Strain-Induced asymmetry and on-site dynamics of silicon defects in graphene

Ondrej Dyck,Feng Bao,Maxim Ziatdinov,Ali Yousefzadi Nobakht,Kody Law,Artem Maksov,Bobby G. Sumpter,Richard Archibald,Stephen Jesse,Sergei V. Kalinin,David B. Lingerfelt

Carbon Trends（2022）

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摘要

•DFT calculations predict two distinct isomers for Si defects in strained graphene.•STEM images capture transitions between distinct Si structures with the same bonding.•Anisotropic strain can be generated and also exposed by Si defects in graphene.

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关键词

On-site asymmetry,Symmetry breaking,Strain engineering,Strain-induced phenomena,Defect dynamics,Defect microanalysis

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