Charge Sensing Properties Ofmonolithic CMOS Pixel Sensors Fabricated in a 65 Nm Technology
Szymon Bugiel,Andrei Dorokhov,Mauro Aresti,Jerome Baudot,Stefania Beole,Auguste Besson,Roma Bugiel,Leonardo Cecconi,Claude Colledani,Wenjing Deng, Antonello Di Mauro,Ziad El Bitar,Mathieu Goffe,Jan Hasenbichler,Geun Hee Hong, Christine Hu-Guo,Kimmo Jaaskelainen,Alex Kluge,Magnus Mager,Davide Marras,Joao de Melo,Magdalena Munker,Hung Pham,Francesco Piro,Felix Reidt,Gianluca Aglieri Rinella, Roberto Russo,Valerio Sarritzu,Serhiy Senyukov,Walter Snoeys,Miljenko Suljic,Gianluca Usai,Isabelle Valin,Marc Winter,Yitao Wu NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT（2022）
Key words
Monolithic CMOS pixel sensors,65nm TPSCo
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