Enhanced charge transfer and reaction kinetics of vanadium pentoxide for zinc storage via nitrogen interstitial doping

Xuena Xu,Yumin Qian,Chunting Wang,Zhongchao Bai,Chenggang Wang,Ming Song,Yi Du,Xun Xu,Nana Wang,Jian Yang,Yitai Qian,Shixue Dou

Chemical Engineering Journal（2023）

引用 4|浏览30

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摘要

•The prepared N interstitial doped V2O5 has excellent rate and cycling properties.•N interstitial doping reduces bandgap energy of V2O5, improving the conductivity.•The doped N weakens forces between Zn2+ and V2O5, accelerating Zn2+ diffusion.•N doping turns Zn2+ move path from vertical interlayer into planer intralayer.•H bond connecting NH2 and VO5 hinders layer exfoliation and enhances layer stable.

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关键词

Vanadium pentoxide,Nitrogen interstitial doping,Reaction kinetics,Zinc-ion batteries

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