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Residual strain around a through-silicon via

R. A. Coppeta, M. Pusterhofer, W. Zisser, G. Kravchenko

Microelectronics Reliability(2022)

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摘要
The results of a finite element analysis of the strain gradients in the silicon sample around a through-silicon via (TSV) are compared with available measurements. The simulation results agree well with the XRD data for the radial and axial normal components, whereas a significant discrepancy for the values of the tangential normal component has been found. In particular, the impact of the residual stress of the layers between the TSV and the silicon sample is evaluated. The residual stresses deforms the silicon sample, causing a large strain gradient near the TSV.
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关键词
FEM model,TSV,KOZ,Silicon
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