Doping effect on the light absorption and photoluminescence of Ge/Si quantum dots in the infrared spectral range

The results of comprehensive studies of near-infrared photoluminescence and mid-infrared equilibrium and photoinduced absorption spectra in structures with Ge/Si quantum dots with different doping levels at different optical pumping intensities and different temperatures are presented. Obtained dependences of interband photoluminescence spectra on temperature and optical pumping intensity are explained by the change in the intensities of direct and indirect in real space electron-hole recombination in Ge/Si quantum dots. The spectra of equilibrium and photoinduced absorption of polarized mid-infrared radiation demonstrate peaks associated with transitions of holes from the ground and excited states to continuum states above quantum dots and with optical transitions from the ground states to excited ones.