Enhanced drain current and cut off frequency in AlGaN/GaN HEMT with BGaN back barrier

K. Husna Hamza,D. Nirmal,A.S. Augustine Fletcher,J. Ajayan,Ramkumar Natarajan

Materials Science and Engineering: B（2022）

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摘要

•Enhancment of Drain current in GaN HEMT with BGaN Back barrier.•Improvement of linearity of GaN HEMTwith BGaN back barrier.•Higher cutoff frequency of GaN HEMT with BGaN back barrier.

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关键词

Back Barrier,Drain current density,Pinch off voltage,Voltage gain

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