Optical, temperature, and bulk analysis theoretically in p-Si/n-CdS heterojunction solar cell

In the present communication, we report a rigorous analysis of optical, temperature, and bulk properties for the proposed configuration of p-Si/n-CdS heterojunction solar cell with ITO window layer. The proposed configuration here initially points out the investigation of bulk recombination by calibrating the concentrations of the defects of the p-Si absorber layer. Thus, solar cell efficiency must be improved favorably. Further, the effects of illumination and temperature dependence are also studied to monitor the signature of weather effect on the characteristic performance parameters. The obtained results show exciting behavior for two defects within the bandgap of the absorber layer. It is observed that the bulk recombination current (BRC) is very high for the higher concentrations of defects. Further, for the temperatures (in all weather conditions), the performance parameters as efficiency (η) and open-circuit voltage (Voc) show almost similar behavior with negative slop on increasing temperature, but short circuit current (Jsc) has the least variation. The fill factor first rises to room temperature and then falls for a higher temperature. Again, the illumination intensity of the incident radiation becomes crucial to affect the various performance parameters. Ultimately, we observed that the best performing efficiency of the proposed configuration at room temperature is 18.19 %.