Pulsed direct-current reactive sputtering of high Young's modulus [002] oriented aluminum nitride thin films

This work reports a process-parameter optimization of [002] oriented high Young's modulus aluminum nitride (AlN) thin films deposited by pulsed direct current (DC) reactive sputtering method. Properties of deposited AlN films are mainly determined by the material's microstructure and morphology, which can be modulated by the process parameters. Commonly explored process parameters of reactive sputtering of AlN are substrate temperature, process pressure, gas composition, substrate type, etc. Process pressure and nitrogen concentration have the most significant influence on the topography and morphology of the film, deposited by the pulsed DC reactive sputtering method. DC pulse parameters such as pulse frequency and pulse duty cycle also influence the properties of deposited AlN films, which have been addressed in this work. The pulse frequency of 100 kHz and a duty cycle of 80% was found to be the most suitable pulse parameters. This paper also reports the voltage and current behavior and deposition rate dependence under varying process parameters and pulsed properties. Optimization of process parameters is commonly done by characterizing the deposited AlN films’ crystallinity, surface roughness, and residual stress. This work addresses the influences of process and pulse parameters on Young's modulus besides other characteristic properties of the film. The AlN films deposited with the optimized method and pulse parameters yield Young's modulus of up to 335 GPa while dropping the surface roughness to 1.2 nm.