Reactive pulsed laser deposition of low particulate density and epitaxial TiN films on Si (100) for functional oxide integration

Sandeep Vura,Rajeev Kumar Rai,Pavan Nukala,Srinivasan Raghavan

Thin Solid Films（2022）

引用 2|浏览13

暂无评分

摘要

•Low particulate density epitaxial TiN on Si (100) is deposited via reactive PLD.•Plume chemistry (N/Ti) alters the structure and microstructure of the TiN film.•TiN films roughen in RPLD process under low N availability.•Edge mobility along ><˃˄110> TiN limits the lateral growth rates.•Ferroelectric BaTiO3 is epitaxially integrated on reactive PLD TiN/Si.

查看译文

关键词

Epitaxy,Reactive pulsed laser deposition,Oxides,Silicon substrate,Ferroelectric,X-ray diffraction,Surface morphology

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要