A new normalized direct conductance method for observation of Poole-Frenkel current

Solid-State Electronics(2022)

引用 0|浏览2
暂无评分
摘要
•A graphical method to extract the parameters of the Poole-Frenkel current model is presented.•It accounts for the general case in which there is a voltage drop across a parasitic resistance.•It is tested with measurements of gate leakage current of a MOSFETs and with TCAD simulations.•The dominant conduction mechanism is Poole-Frenkel for the middle gate voltage region while Hot Electron Injection dominates the low- and high-voltage regions.
更多
查看译文
关键词
MOSFET,Poole-Frenkel (PF),Hot Electron Injection (HEI),TCAD-SILVACO,SiON dielectric,Parameter extraction,MOS gate leakage current
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要