Effect of Surface and Interface on the Back-Gated n-MOSFET with Two-Dimensional MoS2 Channel Grown by Chemical Vapor Deposition

Two-dimensional semiconductor channel MOSFETs are often suffering from the extrinsic effects such as the traps in surface and interfaces. These traps may lead to the instability of the device characteristics. To find the location of the dominant traps is a difficult but important task. In this paper, we present the current-voltage, current-time, and low frequency noise characteristics of the back-gated n-MOSFET with MoS ₂ channel grown by chemical vapor deposition. The experimental results measured under vacuum condition and at different temperatures make us possible to trace the location of the dominant traps leading to the device instability. The results show that, in addition to the surface effect observed in the ambient environment, both the channel/gate-oxide interface and the metal contacts have important effect on the electric characteristic under vacuum condition, with the source contact being dominant for the device investigated.