Special Session on RF/5G Test

2022 IEEE European Test Symposium (ETS)(2022)

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摘要
This paper presents an innovative integrated load-pull bench at 160 GHz. The proposed system, which is designed in a 55-nm BiCMOS technology, is tailored to deal with all of the measurement functions including signal generation, shaping, and magnitude and phase measurement. This system will allow precise characterization of Devices-Under-Test (DUTs) (i.e., circuits and/or devices) when integrated together with the DUT. In addition, the proposed system could also be envisioned as a System-on-Chip (SoC) that, when reported into an RF probe, could serve as a test bench for any integrated circuit.
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关键词
mm-Wave,BiCMOS,active load-pull,impedance tuner,power meter
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