A 22nm 32Mb Embedded STT-MRAM Macro Achieving 5.9ns Random Read Access and 5.8MB/s Write Throughput at up to Tj of 150 °C

Takahiro Shimoi,Ken Matsubara,Tomoya Saito,Tomoya Ogawa,Yasuhiko Taito,Yoshinobu Kaneda, Masayuki Izuna,Koichi Takeda,Hidenori Mitani,Takashi Ito,Takashi Kono

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)（2022）

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摘要

This paper presents a high-precision sense amplifier and a fast write throughput technique of a 32Mb embedded STT-MRAM macro in a 22nm process for high-end microcontroller units. Boosted cross-couple sense amplifier achieves 5.1ns and 5.9ns random read access at Tj of 125°C and 150°C, respectively. A variable parallel bit write with fast voltage setup sequence enables 5.8MB/s write throughput and 65-69% reduction in write energy consumption.

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关键词

embedded STT-MRAM macro,random read access,write throughput technique,microcontroller units,write energy consumption,boosted cross-couple sense amplifier,variable parallel bit write,fast voltage setup sequence,size 22.0 nm,time 5.1 ns,byte rate 5.8 MByte/s,time 5.9 ns,temperature 125.0 degC,temperature 150.0 degC,storage capacity 32 Mbit

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