Novel selector for high density non-volatile memory with ultra-low holding voltage and 107 on/off ratio
2015 Symposium on VLSI Technology (VLSI Technology)（2015）
摘要
We present a novel selector made of doped-chalcogenide material. This selector not only achieves low holding voltage (0.2 V) and large on/off ratio (>10
7
), but also exhibits the high on-current density (>1.6 MA/cm
2
) and large hysteresis window (1.2 V). Besides, excellent selector performances with ultra-low off-state leakage current (10 pA), high switching speed (<10 ns), high endurance (>10
9
), good thermal stability (up to 180°C) have been demonstrated. Furthermore, the device exhibits good scalability which is suitable for 3D array integrations.
更多查看译文
关键词
doped-chalcogenide material,ultra-low holding voltage,on-off ratio,on-current density,hysteresis window,selector performances,ultra-low off-state leakage current,switching speed,endurance,thermal stability,3D array integrations,nonvolatile memory,current 10 pA
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要