Fabrication of manganese ferrite on laser scribed carbon electrode for carbon-semiconductor-carbon based Infrared Photodetectors

MnFe2O4 carbon-semiconductor-carbon based photodetector was fabricated and the infrared light response of the fabricated device is realized in this present work. MnFe2O4 nanomaterials were synthesized by auto combustion method. Cubic phase of the synthesized nanomaterial was confirmed by X-ray diffraction technique. A narrow direct band-gap of the synthesized material was observed and it was found to be 1.53eV, which was confirmed by Uv–visible DRS spectrum. Scanning electron microscopy (SEM) micrographs showcased the well-formed laser scribed carbon electrodes on polyamide tape with enhanced surface porosity. The laser scribing fluency was fixed to 3.5 J/cm2 which shows a well-formed electrode. SEM micrographs also show the synthesized MnFe2O4 coated on the electrode by doctor blade method was appeared to be micro grains. Significant photo response was observed from photocurrent measurement. The responsivity and detectivity of the device were found to be 1.95 A/W and 6 × 1010 jones, respectively. It was found that the rise time and fall time of the fabricated MnFe2O4 photodetector was 13s and 14 s, respectively at 10 V set bias. These results clearly suggests that, the fabricated cost-effective MnFe2O4 photodetector will forge a new path for the next generation optoelectronic device with good performance.