Composition measurement of fully-strained epitaxial InxGa1-xAsyP1-y/InP layer by temperature dependent X-ray diffraction

Si-Wei Lin,Jin-Yi Yan,Xu-Yi Zhao,Wen-Fu Yu,Qian Gong

Journal of Crystal Growth（2022）

引用 0|浏览11

暂无评分

摘要

•A method demonstrated to measure the composition of fully-strained epi-layers.•The method was verified by the InGaAsP layer epitaxially grown on InP by MBE.•Desirable precision of the measurement can be obtained by this method.

查看译文

关键词

A1. X-ray diffraction,A1. Characterization,B2. Semiconducting III-V materials,A3. Molecular beam epitaxy

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要