Triple-Cation Organic–Inorganic Hybrid Perovskite Memristor Achieving Adjustable Analog–Digital Conversion Behavior

As an emerging two-terminal device, memristors have attracted extensive interest due to their integration of memory and computing, which can drastically boost the progress of high-density storage and artificial intelligence. Recently, organometal trihalide perovskites (OTPs) were reported to be promising active materials for photoelectronic applications. In this manuscript, a CsFAMAPbIBr-based memristor with a structure of W/Cs 0.05 (FA x MA 1− x ) 0.95 PbBr y I 3− y /ITO is presented. By applying sweeping voltage with different amplitudes or scanning speed, the memory characteristic of the device can be tuned to realize the conversion between analog and digital. Furthermore, we elaborate the conversion mechanism in detail mainly by space-charge-limited conduction. This work paves a way for analyzing the influence of external applied voltage on memristor characteristics and could be beneficial to the potential application in digital logic application and neuromorphological analysis.