Aggressive Equivalent Oxide Thickness of ~0.7 nm on Si0.8Ge0.2 Through HfO2 Dielectric Direct Deposition
IEEE Electron Device Letters(2022)
Abstract
This study demonstrated the ultralow equivalent oxide thickness (EOT) value of 0.72 nm and the high-quality high-
$\kappa $
/Si0.8Ge0.2 interface on p-type Si0.8Ge0.2 with direct deposition of HfO2. The ultrathin interfacial layer (IL) thickness of ~0.4 nm was observed in the high-resolution transmission electron microscope (HRTEM) images. The high-quality interface might result from the high-
$\kappa $
/Si0.8Ge0.2 interface mainly consisting of the higher Si oxidation states, verified by X-ray photoelectron spectroscopy (XPS). Thus, this study refutes the necessity of IL formation and paves the way for low-EOT Si0.8Ge0.2 devices.
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Key words
Equivalent oxide thickness,high-κ direct deposition,Si0.8Ge02 MOSCAPs
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