Analysis of the Optical Coupling Between GaSb Diode Lasers and Passive Waveguides: A Step Toward Monolithic Integration on Si Platforms
IEEE Photonics Journal(2022)
Abstract
We simulate the optical coupling between
$2.3\ {\boldsymbol{\mu m}}$
GaSb-based diode lasers (DLs) epitaxially grown on on-axis silicon (001) and passive waveguides in the butt-coupling geometry. 3D FDTD simulations reveal how the optical coupling is affected by the air gap between the laser cavity and the waveguide that arises from the laser etched-facet definition. We also model alternative approaches consisting in filling the gap with higher-refractive index materials transparent in the mid-infrared window. Finally, because of their fabrication flexibility, we propose to implement polymeric waveguides in order to achieve improved coupling performances.
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Key words
III-V integration on Si,photonic integrated circuits,silicon photonics
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