Heterodielectric-Based Gate Oxide Stack Engineering in FDSOI Structure with Enhanced Analog Performance

This paper presents the examination on the analog execution of a heterodielectric materials gate oxide-based fully depleted silicon-on-insulator (FDSOI) metal oxide semiconductor (MOS) transistor. Heterodielectric structure in gate oxide stack is utilized which helps to improve the control of gate electrode over the channel. In the examination, OFF-state current (IOFF), ON-state current (ION), ION/IOFF ratio, transconductance (gm), subthreshold slope (SS), and drain-induced barrier lowering (DIBL) are improved in stacking of high-k gate dielectric oxide material over the silicon dioxide (SiO2) layer. The structure is simulated, and parameters are extracted by using the Silvaco ATLAS 2D device simulator.