Intrinsic Properties of Metallic Edge States in MoS2 Nanobelt

Low-dimensional transition metal dichalcogenides (TMDs) represented by MoS2 have attracted attraction due to their unique structural, physical, and chemical properties. In this work, one-dimensional (1D) MoS2 nanobelts were firstly synthesized on SiO2/Si substrate via chemical vapor deposition (CVD) method. The base planes of MoS2 nanobelt vertically stand on the substrate, which makes the layer edges form the top surface of the nanobelt. By using the micro- and nanoscale fabrication processing, we fabricated field-effect transistor (FET) based on MoS2 nanobelt. The transfer characteristics of the top-gated device indicates that gate modulation in the MoS2 edges is negligible, and the MoS2 edges are found to be a hole metal with the mobility of ~ 0.0023 m2/V·s. The device with zero gate voltage exhibits the carrier concentration of ~ 3.20 × 1013 cm− 2 and resistivity of ~ 8.59 × 104 Ω. The results firstly demonstrate the intrinsic transport properties of metallic edge states in MoS2 nanobelts, which might facilitate the application of MoS2 metallic edges in other aspects in the future.