The structure and electronic properties of InBixAs1-x alloy (0 ≤ x < 0.1) predicted by first-principles calculations

•The bowing coefficient for the lattice constant of InBixAs1-x is −0.022 Å and the lattice constant of InBi is 6.657 Å.•The experimental electronic properties of InBixAs1-x with bismuth concentration less than 0.1 is reproduced by the GGA + U method.•The bandgap narrowing of InBixAs1-x is on account of the ascending of the VBM and the descending of the CBM.•The combination of the modified BAC model and a linear equation can be employed to describe the bandgap energy of the As-rich InBixAs1-x.•When the bismuth concentration is 0.105, the bandgap energy of InBixAs1-x can be lowered to 0 eV.