Электронно-дифракционное изучение преобразования реконструкции 6 3 на поверхности 4H-SiC(0001) в квазисвободный эпитаксиальный графен

Through the agency of reflection high-energy electron diffraction (RHEED) we have studied the transformation of the reconstruction 6√3 grown on substrate 4H-SiC in an Ar medium with a short sublimation annealing time in quasi-free-standing epitaxial graphene due to the use of hydrogen intercalation. It was found that grown reconstruction layer was not uniform. The comparison of the results of the structural study of quasi-free-standing graphene and single-layer graphene on buffer layer has been made.