Simulation of far-infrared HgTe/HgCdTe quantum-well vertical-cavity surface-emitting laser

We propose an original design for a far-infrared vertical-cavity surface-emitting laser based on a heterostructure with ten 4.7-nm HgTe/Hg0.3Cd0.7Te quantum wells grown on a [013] GaAs substrate. Its characteristics were calculated, and it was shown that the quality factor of the proposed resonator design can reach 248 at a wavelength of 23.25 mu m, which is sufficient for the occurrence of laser generation at this wavelength at a temperature of 20 K and a concentration of nonequilibrium carriers of 1.4 x 10(10) cm(-2). The estimate of the threshold pump intensity using CO2 laser radiation at a wavelength of 10.6 mu m is 1W/cm(2), which makes it possible to expect continuous wave mode lasing. Such a low-threshold pump intensity should also lead to lasing at substantially higher temperatures. (C) 2022 Society of Photo-Optical Instrumentation Engineers (SPIE)