Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter Tail in Advanced SPAD Devices
IEEE Journal of the Electron Devices Society(2022)
Abstract
A new method to reliably simulate the PDE and jitter tail for realistic three-dimensional SPAD devices is presented. The simulation method is based on the use of electric field lines to mimic the carriers' trajectories, and on one-dimensional models for avalanche breakdown probability and charges transport. This approach allows treating a three-dimensional problem as several one-dimensional problems along each field line. The original approach is applied to the McIntyre model for avalanche breakdown probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.
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Key words
Single-photon avalanche diodes,Jitter,Semiconductor process modeling,Computational modeling,Solid modeling,Silicon,Photonics,Avalanche breakdown probability,breakdown voltage,jitter,photon detection efficiency (PDE),single-photon avalanche diode (SPAD),technology computer-aided design (TCAD)
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