Ultra-wide bandgap Al0.1Ga0.9N double channel HEMT for RF applications

This article reports the performance analysis of gate field plate AlGaN dual channel high electron mobility transistor (HEMT). The proposed Al0.31Ga0.69N/Al0.1Ga0.9N/Al0.31Ga0.69N/Al0.1Ga0.9N heterostructures creates two quantum wells. Due to the strong coupling between two channels, device shown improved 2DEG (two-dimensional electron gas), and enhanced carrier confinement. A distinct double-hump feature is observed in both DC and RF characteristics of the proposed HEMT. For L-G = 0.8 mu m, gate field plate (L-FP = 0.5 mu m), double channel HEMT shows the breakdown voltage of 695 V and F-T/F-MAX of 30/70 GHz. Moreover, the AlGaN double channel HEMT showed a ON-state current density (I-DS) of 0.7 A/mm, transconductance (G(m)) of 117 mS/mm, and lower noise figure. The proposed AlGaN channel HEMT in this work is suitable for future high-power K-band microwave applications.